K4N25G |
Part Number | K4N25G |
Manufacturer | KODENSHI KOREA CORP |
Description | Photocoupler K4N25G • K4N25H These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 6 5 4 0.25 6.4 DIMENSION (Unit : mm)... |
Features |
0.25 1 2 3
0
-15
8.9 0.25 Orientation Mark
0.25
K4N25G
PIN NO. AND INIERNAL CONNECION DIAGRAM 4 5 6
1
2.7Min. 0.5 2.54 0.25 1.2
2 5
3 4
APPLICATIONS
• Interface between two circuits of different potential • Vending Machine, Copiers • Measuring Instrument • Home Appliances K4N25H 6 1 2 3 MAXIMUM RATINGS Parameter Forward Current Input Reverse Voltage Peak Forward Current Power Dissipation Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Output Collector-Base Breakdown Voltage** Emitter-Base Breakdown Voltage** Collector Current Collector Power Dissipation... |
Document |
K4N25G Data Sheet
PDF 187.37KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4N25 |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | |
2 | K4N25A |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | |
3 | K4N25H |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | |
4 | K4N26 |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | |
5 | K4N26323AE-GC |
Samsung |
128Mbit GDDR2 SDRAM |