K4N25A |
Part Number | K4N25A |
Manufacturer | KODENSHI KOREA CORP |
Description | Photocoupler K4N25 • K4N25A These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 0.25 (Unit : mm) FEATURES ... |
Features |
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V) • Electrical Isolation Voltage : AC2500Vrms • UL Recognized File No. E107486 0.25 6 5 4 6.4 6.4 0.25 1 8.9 Orientation Mark 2 0.25 3 0 -15 APPLICATIONS • Interface between two circuits of different potential • Vending Machine, Voltage Regulator • Traffic Controller System • Programmable Controller 0.51Min. 0.25 6 5 4 2.7Min. 3.8 0.5 2.54 0.25 1.2 1 2 3 MAXIMUM RATINGS Parameter Forward Current Input Reverse Voltage Peak Forward Current *1 Power Dissipa... |
Document |
K4N25A Data Sheet
PDF 256.34KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K4N25 |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | |
2 | K4N25G |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | |
3 | K4N25H |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) | |
4 | K4N26 |
KODENSHI KOREA CORP |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | |
5 | K4N26323AE-GC |
Samsung |
128Mbit GDDR2 SDRAM |