K4M56163PE-F1L |
Part Number | K4M56163PE-F1L |
Manufacturer | Samsung |
Description | The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design ma... |
Features |
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) • DQM for masking. • Auto refresh. • • • • 64ms refresh peri... |
Document |
K4M56163PE-F1L Data Sheet
PDF 112.60KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K4M56163PE-F90 |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
2 | K4M56163PE-R |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
3 | K4M56163PE-RG |
Samsung |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA | |
4 | K4M56163PG |
Samsung semiconductor |
4M x 16Bit x 4 Banks Mobile SDRAM | |
5 | K4M561633G |
Samsung semiconductor |
4M x 16Bit x 4 Banks Mobile SDRAM |