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HYB511000BJ-50 |
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| Part Number | HYB511000BJ-50 |
| Manufacturer | Siemens |
| Description | DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group 33 01.95 HYB 511000BJ/BJL-... |
| Features |
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for low power battery backup applications. Pin Definitions and Functions Pin No. A0-A9 RAS DI DO CAS WE Function Address Inputs Row Address Strobe Data In Data Out Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) Test Function No Connection
VCC VSS
TF N.C.
Semiconductor Group
34
HYB 511000BJ/BJL-50/-60/-70 1 M × 1-DRAM
Pin Configuration (top view)
SOJ-26/20-1
... |
| Document |
 HYB511000BJ-50 Data Sheet
PDF 193.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HYB511000BJ- |
Siemens |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
|
| 2 | HYB511000BJ-60 |
Siemens |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
|
| 3 | HYB511000BJ-70 |
Siemens |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
|
| 4 | HYB511000BJL-50 |
Siemens |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
|
| 5 | HYB511000BJL-60 |
Siemens |
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM |
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