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APT1001RBLC |
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| Part Number | APT1001RBLC |
| Manufacturer | Advanced Power Technology |
| Description | APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charg... |
| Features |
.063" from Case for 10 Sec. Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I D T E A C M N R A O V F D A IN
1000 11 44 ±30 ±40 280 2.24 300 26 30 -55 to 150
(Repetitive and Non-Repetitive)
1 4
Volts Watts W/°C °C Amps mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 11 1.00 25 250 ±100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On... |
| Document |
 APT1001RBLC Data Sheet
PDF 35.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | APT1001RBN |
Advanced Power Technology |
MOSFET |
|
| 2 | APT1001RBVR |
Advanced Power Technology |
MOSFET |
|
| 3 | APT1001R1AVR |
Advanced Power Technology |
MOSFET |
|
| 4 | APT1001R1BN |
Advanced Power Technology |
MOSFET |
|
| 5 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET |
|