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Q62702-A95 |
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| Part Number | Q62702-A95 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon Switching Diodes BAS 19 … BAS 21 q High-speed, high-voltage switch Type BAS 19 BAS 20 BAS 21 Marking JPs JRs JSs Ordering Code (tape and reel) Q62702-A95 Q62702-A113 Q62702-A79 Pin Conf... |
| Features |
IR – – – – 100 100 nA µA – – 1 1.25 120 200 250 – – – – – – V Values typ. max. Unit Forward voltage IF = 100 mA IF = 200 mA Reverse current VR = VR max VR = VR max; Tj = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 30 mA, IR = 30 mA, RL = 100 Ω measured at IR = 3 mA Test circuit for reverse recovery time CD trr – – – – 5 50 pF ns Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF 1) Pulse test: tp ≤ 300 µs, D = 2 %. Semiconductor Group 2 BAS 19 … BAS 21 Forward current IF = f (... |
| Document |
 Q62702-A95 Data Sheet
PDF 105.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-A910 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
|
| 2 | Q62702-A911 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
|
| 3 | Q62702-A912 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
|
| 4 | Q62702-A913 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
|
| 5 | Q62702-A914 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
|