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Q62702-A919 |
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| Part Number | Q62702-A919 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon Low Leakage Diode Low-leakage applications q Medium speed switching times q Single diode q BAS 116 Type BAS 116 Marking JVs Ordering Code (tape and reel) Q62702-A919 Pin Configuration Pa... |
| Features |
VR = 75 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – 2 0.5 – 3 pF µs Values typ. max. Unit V(BR) VF 75 – – V mV – – – – IR – – – – – – – – 900 1000 1100 1250 nA 5 80 Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF Semiconductor Group 2 BAS 116 Forward current IF = f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25... |
| Document |
 Q62702-A919 Data Sheet
PDF 98.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Q62702-A910 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
|
| 2 | Q62702-A911 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
|
| 3 | Q62702-A912 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
|
| 4 | Q62702-A913 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) |
|
| 5 | Q62702-A914 |
Siemens Semiconductor Group |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
|