Q62702-A1271 |
Part Number | Q62702-A1271 |
Manufacturer | Siemens Semiconductor Group |
Description | BAT 17W Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications 3 2 1 BAT 17W BAT 17-04W BAT 17-05W BAT 17-06W VSO05561 Type BAT 17W BAT 17-0... |
Features |
lumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11
Sep-04-1998 1998-11-01
BAT 17W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. -
Unit
V(BR) IR
4
V µA
I (BR) = 10 µA
Reverse current
VR = 3 V VR = 4 V
Reverse current
-
-
0.25 10 1.25 nA mV
IR VF
VR = 3 V, TA = 60 °C
Forward voltage
I F = 0.1 mA I F = 1 mA I F = 10 mA
AC characteristics Diode capacitance
200 250 350
275 340 425
350 450 600
CT rf
0.4 -
0.55 8
0.75 15
pF Ω
VR = 1 V, f = 1 MHz
Differentia... |
Document |
Q62702-A1271 Data Sheet
PDF 39.07KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | Q62702-A1270 |
Siemens Semiconductor Group |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | |
2 | Q62702-A1272 |
Siemens Semiconductor Group |
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) | |
3 | Q62702-A1273 |
Siemens Semiconductor Group |
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) | |
4 | Q62702-A1274 |
Siemens Semiconductor Group |
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) | |
5 | Q62702-A1277 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package) |