QM300HA-2HB Mitsubishi Electric Semiconductor HIGH POWER SWITCHING USE INSULATED TYPE Datasheet, en stock, prix

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QM300HA-2HB

Mitsubishi Electric Semiconductor
QM300HA-2HB
QM300HA-2HB QM300HA-2HB
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Part Number QM300HA-2HB
Manufacturer Mitsubishi Electric Semiconductor
Description MITSUBISHI TRANSISTOR MODULES QM300HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2HB • • • • • IC Collector current 300A VCEX Collector-emitter voltage ... ...
Features on Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 300 300 1980 16 3000
  –40~+150
  –40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 470 Unit V V V V A A W A A °C °C V N
·m kg
·cm N
·m kg
·cm N
·m kg
·cm N
·m kg
·cm g Mounting screw M6...

Document Datasheet QM300HA-2HB Data Sheet
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