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MITSUBISHI TRANSISTOR MODULES QM300HA-HB HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-HB • • • • • IC Collector current ......... 300A VCEX Collector-emitter voltage ........... 600V hFE DC current gain.............. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controll.
verse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 300 300 1560 18 3000
–40~+150
–40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 470 Unit V V V V A A W A A °C °C V N
·m kg
·cm N
·m kg
·cm N
·m kg
·cm N
·m kg
·cm g
mounting screw M6 — Mounting torque B(E) terminal scre.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | QM300HA-HK |
Mitsubishi |
Transistor Module |
|
| 2 | QM300HA-24 |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
|
| 3 | QM300HA-24B |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
|
| 4 | QM300HA-2H |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
|
| 5 | QM300HA-2HB |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
|
| 6 | QM300HC-M |
Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE NON-INSULATED TYPE |
|
| 7 | QM3001D |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|
| 8 | QM3001G |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|
| 9 | QM3001J |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|
| 10 | QM3001K |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|
| 11 | QM3001S |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|
| 12 | QM3001U |
UBIQ |
P-Ch 30V Fast Switching MOSFETs |
|