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RM10Z |
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| Part Number | RM10Z |
| Manufacturer | EIC discrete Semiconductors |
| Description | RM10 - RM10Z PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILI... |
| Features |
:
* * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
SILICON RECTIFIER DIODES D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0.284 (7.20) 0.268 (6.84)
MECHANICAL DATA :
* Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
Rating at 25 °C ambient temperature un... |
| Document |
 RM10Z Data Sheet
PDF 69.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RM10 |
FPE |
POWER TRANSFORMER MODULES |
|
| 2 | RM10 |
Sanken electric |
Silicon Diode |
|
| 3 | RM10 |
EIC discrete Semiconductors |
SILICON RECTIFIER DIODES |
|
| 4 | RM100C1A-XXF |
Mitsubishi Electric Semiconductor |
HIGH SPEED SWITCHING USE INSULATED TYPE |
|
| 5 | RM100CA-XXF |
Mitsubishi Electric Semiconductor |
HIGH SPEED SWITCHING USE INSULATED TYPE |
|