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IRFD110 |
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| Part Number | IRFD110 |
| Manufacturer | Intersil Corporation |
| Description | IRFD110 Data Sheet July 1999 File Number 2314.3 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET desig... |
| Features |
• 1A, 100V • rDS(ON) = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD110 PACKAGE HEXDIP BRAND IRFD110 Symbol D NOTE: When ordering, use the entire part number. G S www.DataSheet4U.com Packaging HEXDIP DRAIN GATE SOURCE 4-269 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www... |
| Document |
 IRFD110 Data Sheet
PDF 82.31KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFD110 |
Vishay |
Power MOSFET |
|
| 2 | IRFD110 |
International Rectifier |
Power MOSFET |
|
| 3 | IRFD110 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 4 | IRFD110PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRFD111 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|