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~o~~ FIELD EFFECT POVVER TRANSISTOR IRFD110,111 D82Bl2,K2 1.0 AMPERES 100,60 VOLTS RDS(ON} = 0.6 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching a.
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
N-CHANNEL
CASE STYLE 4-PIN DIP
DIMENSI.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRFD110 |
Vishay |
Power MOSFET |
|
| 2 | IRFD110 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | IRFD110 |
International Rectifier |
Power MOSFET |
|
| 4 | IRFD110 |
GE |
FIELD EFFECT POWER TRANSISTOR |
|
| 5 | IRFD110PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRFD112 |
GE Solid State |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR |
|
| 7 | IRFD113 |
GE Solid State |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR |
|
| 8 | IRFD113 |
Vishay |
Power MOSFET |
|
| 9 | IRFD120 |
Vishay |
Power MOSFET |
|
| 10 | IRFD120 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 11 | IRFD120 |
International Rectifier |
Power MOSFET |
|
| 12 | IRFD120 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|