IRF9520NS |
Part Number | IRF9520NS |
Manufacturer | International Rectifier |
Description | l l D VDSS = -100V RDS(on) = 0.48Ω G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... |
Features |
ipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9520L) is available for lowprofile applications.
D 2 Pak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and St... |
Document |
IRF9520NS Data Sheet
PDF 155.56KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF9520N |
International Rectifier |
Power MOSFET | |
2 | IRF9520NL |
International Rectifier |
Power MOSFET | |
3 | IRF9520NPBF |
International Rectifier |
HEXFET POWER MOSFET | |
4 | IRF9520NSPBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRF9520 |
Intersil Corporation |
P-Channel Power MOSFET |