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IRF7805 |
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| Part Number | IRF7805 |
| Manufacturer | International Rectifier |
| Description | These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for h... |
| Features |
IRF7805 IRF7805A Vds 30V 30V Rds(on) 11mΩ 11mΩ Qg 31nC 31nC Qsw 11.5nC Qoss 36nC 36nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current TJ, TSTG IS ISM 2.5 106 25°C 70°C IDM PD Symbol VDS VGS ID 13 10 100 2.5 1.6 –55 to 150 2.5 106 °C A IRF7805 30 ±12 13 10 100 W A IRF7805A Units V Thermal Resistance Parameter Maximum Junction-to-Ambient RθJA Max. 50 Units °C/W www.ir... |
| Document |
 IRF7805 Data Sheet
PDF 194.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF7805A |
International Rectifier |
N-Channel Power MOSFET |
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| 2 | IRF7805PBF |
Infineon |
Power MOSFET |
|
| 3 | IRF7805PbF |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters |
|
| 4 | IRF7805PBF-1 |
International Rectifier |
Power MOSFET |
|
| 5 | IRF7805TRPbF-1 |
Infineon |
Power MOSFET |
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