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IRF6215 |
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| Part Number | IRF6215 |
| Manufacturer | International Rectifier |
| Description | l l D VDSS = -150V G S RDS(on) = 0.29Ω ID = -13A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... |
| Features |
EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-13 -9.0 -44 110 0.71 ± 20 310 -6.6 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-... |
| Document |
 IRF6215 Data Sheet
PDF 125.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF621 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
|
| 2 | IRF621 |
STMicroelectronics |
N-Channel MOSFET |
|
| 3 | IRF621 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF6215L |
International Rectifier |
(IRF6215L/S) HEXFET Power MOSFET |
|
| 5 | IRF6215LPBF |
International Rectifier |
Power MOSFET |
|