IRF3710S |
Part Number | IRF3710S |
Manufacturer | International Rectifier |
Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
Features |
W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications.
D2Pak
TO-262
IRF3710SPbF IRF3710LPbF
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
... |
Document |
IRF3710S Data Sheet
PDF 303.85KB |
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