isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high effciency switch mode power supplies, Po.
·Drain Current
–ID=57A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 23mΩ(Max)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Designed for high effciency switch mode power supplies,
Power factor correction and electronic lamp ballasts based on half bridge.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
57
A
IDM
Drain Current-Single Plused
230
A
PD
Total Diss.
Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) The Nell IRF3710 are N-channel enhancement mode silico.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF3710L |
International Rectifier |
Power MOSFET | |
2 | IRF3710L |
INCHANGE |
N-Channel MOSFET | |
3 | IRF3710LPBF |
International Rectifier |
Power MOSFET | |
4 | IRF3710PbF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRF3710S |
International Rectifier |
Power MOSFET | |
6 | IRF3710S |
INCHANGE |
N-Channel MOSFET | |
7 | IRF3710SPBF |
International Rectifier |
Power MOSFET | |
8 | IRF3710Z |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRF3710Z |
INCHANGE |
N-Channel MOSFET | |
10 | IRF3710ZGPbF |
International Rectifier |
Power MOSFET | |
11 | IRF3710ZL |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRF3710ZL |
INCHANGE |
N-Channel MOSFET |