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IRF1010E |
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| Part Number | IRF1010E |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
uous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
www.irf.com
PD - 94965B
IRF1010EPbF
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
ID = 84A
S
TO-220AB
Max. 84 59 330 200 1.4 ± 20 50 17 4.0 -55 to + 175
300 (... |
| Document |
 IRF1010E Data Sheet
PDF 250.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1010 |
nELL |
N-Channel Power MOSFET |
|
| 2 | IRF1010E |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF1010EL |
International Rectifier |
Power MOSFET |
|
| 4 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF1010EPBF |
International Rectifier |
Power MOSFET |
|