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Features
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VDS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -48 V, VGS = 0 V VDS = -48 V, VGS = 0 V, TJ = 125_C VDS w -4.5 V, VGS = -10 V VGS = -10 V, ID = -1.25 A VGS = -4.5 V, ID = -1 A VDS = -4.5 V, ID = -1 A -6 0.275 0.406 1.9 0.340 0.550 W S -60 -1 "100 -1 -50 V nA mA A
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SI2309DS Data Sheet
