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K9K2G08U0M-FIB0 |
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| Part Number | K9K2G08U0M-FIB0 |
| Manufacturer | Samsung semiconductor |
| Description | Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program oper... |
| Features |
• Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V • Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9K2G08X0M) : (2K + 64)bit x8bit -X16 device(K9K2G16X0M) : (1K + 32)bit x16bit • Automatic Program and Erase - Page Program -X8 device(K9K2G08X0M) : (2K + 64)Byte -X16 device(K9K2G16X0M) : (1K + 32)Word - Block Erase -X8 device(K9K2G08... |
| Document |
 K9K2G08U0M-FIB0 Data Sheet
PDF 734.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9K2G08U0M-F |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 2 | K9K2G08U0M-FCB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 3 | K9K2G08U0M-PCB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 4 | K9K2G08U0M-PIB0 |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
|
| 5 | K9K2G08U0M-V |
Samsung semiconductor |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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