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K6X8008C2B |
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| Part Number | K6X8008C2B |
| Manufacturer | Samsung semiconductor |
| Description | The K6X8008C2B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families ... |
| Features |
• Process Technology: Full CMOS • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family K6X8008C2B-B K6X8008... |
| Document |
 K6X8008C2B Data Sheet
PDF 131.20KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6X8008T2B |
Samsung semiconductor |
CMOS SRAM |
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| 2 | K6X8016C3B |
Samsung semiconductor |
512Kx16 bit Low Power Full CMOS Static RAM |
|
| 3 | K6X8016T3B |
Samsung semiconductor |
512Kx16 bit Low Power Full CMOS Static RAM |
|
| 4 | K6X0808C1D |
Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM |
|
| 5 | K6X0808T1D |
Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM |
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