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K6F3216T6M |
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| Part Number | K6F3216T6M |
| Manufacturer | Samsung semiconductor |
| Description | The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility... |
| Features |
• Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 2M x 16 bit Super Low Power and Low Voltage Full... |
| Document |
 K6F3216T6M Data Sheet
PDF 167.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F3216T6M-F |
Samsung semiconductor |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 2 | K6F3216U6M |
Samsung semiconductor |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F1008R2M |
Samsung Electronics |
SRAM |
|
| 4 | K6F1008S2M |
Samsung Electronics |
SRAM |
|
| 5 | K6F1008V2C |
Samsung semiconductor |
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
|