Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
K6F2008V2E-YF70 |
Click to view a larger image
| Part Number | K6F2008V2E-YF70 |
| Manufacturer | Samsung semiconductor |
| Description | The K6F2008V2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also s... |
| Features |
• Process Technology: Full CMOS • Organization: 256Kx8 • Power Supply Voltage: 3.0 ~ 3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 32-TSOP1-0813.4F, 32-TSOP1-0813.4F(LF) CMOS SRAM GENERAL DESCRIPTION The K6F2008V2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Operating Tempe... |
| Document |
 K6F2008V2E-YF70 Data Sheet
PDF 134.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F2008V2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 2 | K6F2008V2E-LF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F2008V2E-LF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 4 | K6F2008V2E |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 5 | K6F2008T2E |
Samsung semiconductor |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|