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K4S640832E-TC1L |
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| Part Number | K4S640832E-TC1L |
| Manufacturer | Samsung semiconductor |
| Description | The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allo... |
| Features |
• • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high ... |
| Document |
 K4S640832E-TC1L Data Sheet
PDF 126.89KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K4S640832E-TC1H |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 2 | K4S640832E-TC75 |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 3 | K4S640832E-TL1H |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 4 | K4S640832E-TL1L |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 5 | K4S640832E-TL75 |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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