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The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst len.
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• JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle)
CMOS SDRAM
GENERAL DESCRIPTION
The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K4S640832E-TL1H |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 2 | K4S640832E-TL1L |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 3 | K4S640832E-TC1H |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 4 | K4S640832E-TC1L |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 5 | K4S640832E-TC75 |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 6 | K4S640832E |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 7 | K4S640832C |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 8 | K4S640832D |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 9 | K4S640832F |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 10 | K4S640832F-TC75 |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 11 | K4S640832F-TL75 |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
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| 12 | K4S640832H-L75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
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