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K4S640432D |
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| Part Number | K4S640432D |
| Manufacturer | Samsung semiconductor |
| Description | The K4S640432D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allo... |
| Features |
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S640432D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, fabricated with SAMSU... |
| Document |
 K4S640432D Data Sheet
PDF 128.39KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K4S640432H-L75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
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| 2 | K4S640432H-TC |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
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| 3 | K4S640432H-TC75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
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| 4 | K4S640432H-TL75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
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| 5 | K4S640432H-UC75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
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