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Rev. 1.4 November 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burs.
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
GENERAL DESCRIPTION
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K4S640432H-TC |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
|
| 2 | K4S640432H-TC75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
|
| 3 | K4S640432H-L75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification |
|
| 4 | K4S640432H-UC75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
|
| 5 | K4S640432H-UC75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
|
| 6 | K4S640432H-UCL75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
|
| 7 | K4S640432H-UCL75 |
Samsung semiconductor |
64Mb H-die SDRAM Specification 54 TSOP-II |
|
| 8 | K4S640432D |
Samsung semiconductor |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
|
| 9 | K4S640832C |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
|
| 10 | K4S640832D |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
|
| 11 | K4S640832E |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
|
| 12 | K4S640832E-TC1H |
Samsung semiconductor |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
|