JANSR2N7391 - International Rectifier

JANSR2N7391 N-CHANNEL MOSFET

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) PD-91224E IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard™ HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM7360SE 100K Rads (Si) 0.20Ω ID QPL Part Number 22A JANSR2N7391 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performa.

Features

n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor 22 14 A 88 250 W 2.0 W/°C VGS Gate-to-Source Voltage ±20 EAS Single Pulse Avalanche Energ.