Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
IXTH21N50 |
Click to view a larger image
| Part Number | IXTH21N50 |
| Manufacturer | IXYS Corporation |
| Description | MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 Ω 24 A 0.23 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Tes... |
| Features |
l l l l
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
l
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.25 0.23 V V nA µA mA Ω Ω
Applications
l
VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V VGS = 10 V... |
| Document |
 IXTH21N50 Data Sheet
PDF 107.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTH21N50 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTH200N075T |
IXYS Corporation |
Power MOSFET |
|
| 3 | IXTH200N075T |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTH200N085T |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXTH200N10T |
IXYS Corporation |
Power MOSFET |
|