IXFM12N90 ETC HiPerFET Power MOSFETs Datasheet, en stock, prix

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IXFM12N90

ETC
IXFM12N90
IXFM12N90 IXFM12N90
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Part Number IXFM12N90
Manufacturer ETC
Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V ID25 10 A 12 A 13 A RDS(on) 1.1 W 0.9 W 0...
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 V V nA mA mA W W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5
• ID25 TJ = 25°C TJ = 125°C 4.5 ±100 25 1 1.1 0.9 0.8 Applications DC-DC converters Synchronous rectifi...

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