2SD2106 |
Part Number | 2SD2106 |
Manufacturer | Hitachi Semiconductor |
Description | 2SD2106 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 3 kΩ (Typ) 200 Ω (Typ) 3 12 3 2SD2106 Absolute Maximum Ratings (Ta... |
Features |
lector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2
2
2SD2106
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 30 iC (peak) Collector current IC (A) 10
10
Area of Safe Operation
1µ s
20
3 1.0
IC (max)
DC ( on ati er Op
s 0µ
PW
1m = s
10
10
0.3 Ta = 25°C 1 shot pulse 0.1 0.03 0.3
TC = ° 25
ms
C)
0
50 100 Case Temperatu... |
Document |
2SD2106 Data Sheet
PDF 35.77KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD2100 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SD2101 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
3 | 2SD2101 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD2101 |
INCHANGE |
NPN Transistor | |
5 | 2SD2102 |
Inchange Semiconductor |
Silicon NPN Power Transistor |