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2SC5273 |
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| Part Number | 2SC5273 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC5273 Silicon NPN Triple Diffused Application High voltage amplifier Features • High brakedown voltage V(BR)CEO = 1300 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2S... |
| Features |
• High brakedown voltage V(BR)CEO = 1300 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C(peak) PC Tj Tstg Ratings 1300 1300 6 30 60 1.8 150 –55 to +150 Unit V V V mA mA W °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current... |
| Document |
 2SC5273 Data Sheet
PDF 34.09KB |
| Distributor | Stock | Price | Buy |
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