Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1600 1500 1600 600 5 20 12 8 120 3 150 –55 to +150 .
φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to base voltage 2SC5270 2SC5270A 2SC5270 2SC5270A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.3
V
5°
V
1 2 3
2.0
Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V A A A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP
–3E Ful.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5270 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5271 |
Sanken electric |
NPN TRANSISTOR | |
3 | 2SC5271 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC5271 |
INCHANGE |
NPN Transistor | |
5 | 2SC5273 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
6 | 2SC5274 |
Rohm |
High-Voltage Amplifier Transistor | |
7 | 2SC5275 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
8 | 2SC5276 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
9 | 2SC5277 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
10 | 2SC5277A |
ON Semiconductor |
RF Transistor | |
11 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |