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FQU17P06 |
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| Part Number | FQU17P06 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • -12A, -60V, RDS(on) = 0.135Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD17P06 / FQU17P06 -60 -12 -7.6 -48 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°... |
| Document |
 FQU17P06 Data Sheet
PDF 682.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQU17N08 |
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| 2 | FQU17N08L |
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80V LOGIC N-Channel MOSFET |
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| 3 | FQU10N20 |
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| 4 | FQU10N20 |
INCHANGE |
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| 5 | FQU10N20C |
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200V N-Channel MOSFET |
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