These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well su.
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• 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 4.7 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirements allowing direct operation from logic drives
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP9N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP9N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
2 | FQP9N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
3 | FQP9N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
4 | FQP9N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
5 | FQP9N30 |
ON Semiconductor |
N-Channel MOSFET | |
6 | FQP9N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
7 | FQP9N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
8 | FQP9N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
9 | FQP9N90C |
ON Semiconductor |
N-Channel MOSFET | |
10 | FQP90N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
11 | FQP90N10V2 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
12 | FQP90N10V2 |
Fairchild Semiconductor |
100V N-Channel MOSFET |