FQP33N10L |
Part Number | FQP33N10L |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP33N10L 100 33 23 132 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ ... |
Document |
FQP33N10L Data Sheet
PDF 650.96KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQP33N10 |
Inchange Semiconductor |
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2 | FQP33N10 |
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3 | FQP30N06 |
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4 | FQP30N06L |
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5 | FQP32N12V2 |
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