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FQP13N50 |
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| Part Number | FQP13N50 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 12.5 A, 500 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 6.25 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-So... |
| Document |
 FQP13N50 Data Sheet
PDF 1.03MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQP13N50C |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FQP13N50C |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FQP13N50CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FQP13N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 5 | FQP13N06L |
Fairchild Semiconductor |
N-Channel MOSFET |
|