FQP12N20L - Fairchild Semiconductor

FQP12N20L 200V LOGIC N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

Features

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• 11.6A, 200V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers D ! " G! G DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP12N20L 200 11.6 7.35 46.4 ± 20 (Note 2) (Note 1.