Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
FQI17P06 |
Click to view a larger image
| Part Number | FQI17P06 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • -17A, -60V, RDS(on) = 0.12Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S ! ● ● ▶ ▲ ● S D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB17P06 / FQI17P06 -60 -17 -12 -68 ± 25 (Note 2) (Note 1) (Note 1) (... |
| Document |
 FQI17P06 Data Sheet
PDF 689.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQI17P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET |
|
| 2 | FQI17N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET |
|
| 3 | FQI17N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET |
|
| 4 | FQI10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQI10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|