FQD20N06L |
Part Number | FQD20N06L |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (... |
Document |
FQD20N06L Data Sheet
PDF 664.69KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQD20N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
2 | FQD20N06LE |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET | |
3 | FQD20N10 |
OuCan |
N-Channel MOSFET | |
4 | FQD24N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
5 | FQD2N100 |
Fairchild Semiconductor |
1000V N-Channel MOSFET |