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FQB33N10 |
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| Part Number | FQB33N10 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching. 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB33N10 / FQI33N10 100 33 23 132 ±25 (Note 2) (Note 1) (Note 1) (... |
| Document |
 FQB33N10 Data Sheet
PDF 585.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQB33N10L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FQB30N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 3 | FQB30N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET |
|
| 4 | FQB34N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQB34N20 |
ON Semiconductor |
N-Channel MOSFET |
|