FQB34N20 - ON Semiconductor

FQB34N20 N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power suppli.

Features

• 31 A, 200 V, RDS(on) = 75 mΩ (Max.) @ VGS = 10 V, ID = 15.5 A
• Low Gate Charge (Typ. 60 nC)
• Low Crss (Typ. 55 pF)
• 100% Avalanche Tested
• RoHS Compliant D D G S D2-PAK G    








 

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