These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 6.7A, 800V, RDS(on) = 1.05Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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TO-3PF
FQAF Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQAF10N80 800 6.7 4.24 26.8 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Vo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQAF11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
2 | FQAF11N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
3 | FQAF11N90C |
Fairchild Semiconductor |
MOSFET | |
4 | FQAF12N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
5 | FQAF12P20 |
Fairchild Semiconductor |
200V P-Channel MOSFET | |
6 | FQAF13N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
7 | FQAF13N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
8 | FQAF14N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
9 | FQAF15N70 |
Fairchild Semiconductor |
700V N-Channel MOSFET | |
10 | FQAF16N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
11 | FQAF16N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
12 | FQAF17N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |