FQA24N60 |
Part Number | FQA24N60 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
Features |
• 23.5 A, 600 V, RDS(on) = 240 mΩ (Max.) @ VGS = 10 V, ID = 11.8 A • Low Gate Charge (Typ. 110 nC) • Low Crss (Typ. 56 pF) • 100% Avalanche Tested D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD TJ, TSTG TL Power Dissipat... |
Document |
FQA24N60 Data Sheet
PDF 1.51MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQA24N60 |
ON Semiconductor |
N-Channel MOSFET | |
2 | FQA24N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
3 | FQA24N50F |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
4 | FQA24N50F |
INCHANGE |
N-Channel MOSFET | |
5 | FQA20N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |