FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continu.
nless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max FPN630 / FPN630A 1.0 50 125 Units W °C/W °C/W 1999 Fairchild Semiconductor Corporation FPN630 / FPN630A PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FPN630A |
Fairchild Semiconductor |
PNP Low Saturation Transistor | |
2 | FPN660 |
Fairchild Semiconductor |
PNP Low Saturation Transistor | |
3 | FPN660A |
Fairchild Semiconductor |
PNP Low Saturation Transistor | |
4 | FPN-02PG |
Fujikura |
Sensing element/Gauge | |
5 | FPN-02PGR |
Fujikura |
Sensing element/Gauge | |
6 | FPN-05PG |
Fujikura |
Sensing element/Gauge | |
7 | FPN-05PGR |
Fujikura |
Sensing element/Gauge | |
8 | FPN-07PG |
Fujikura |
Sensing element/Gauge | |
9 | FPN-07PGR |
Fujikura |
Sensing element/Gauge | |
10 | FPN-15PG |
Fujikura |
Sensing element/Gauge | |
11 | FPN-15PGR |
Fujikura |
Sensing element/Gauge | |
12 | FPN330 |
Fairchild Semiconductor |
NPN Low Saturation Transistor |