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F1107 |
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| Part Number | F1107 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver a... |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F1107
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
4 A
RF CHARACTERISTICS (... |
| Document |
 F1107 Data Sheet
PDF 39.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F1100 |
Integrated Device Technology |
RF to IF Dual Downconverting Mixer |
|
| 2 | F1100C |
Champion |
5V FR-4 Surface Mount Crystal Clock Oscillators |
|
| 3 | F1100E |
Fox Electronics |
5.0V TTL CLOCK OSCILLATOR |
|
| 4 | F1102NBGI |
IDT |
RF to IF Dual Downconverting Mixer |
|
| 5 | F1108 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|