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FDS8926A |
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| Part Number | FDS8926A |
| Manufacturer | Fairchild Semiconductor |
| Description | SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
| Features |
5.5 A, 30 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.038 Ω @ VGS = 2.5 V. High density cell design for extremely low RDS(ON). Combines low gate threshold (fully enhanced at 2.5V) with high breakdown voltage of 30 V. High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
5 6 G2 7 8
4 3 2 1
S FD 6A 2 89
S2 G1
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous -... |
| Document |
 FDS8926A Data Sheet
PDF 201.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS8928A |
Fairchild Semiconductor |
Dual-Channel MOSFET |
|
| 2 | FDS89141 |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 3 | FDS89161 |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | FDS89161LZ |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 5 | FDS8934A |
Fairchild Semiconductor |
Dual P-Channel MOSFET |
|