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FDS6894A |
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| Part Number | FDS6894A |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain sup... |
| Features |
• 8 A, 20 V. RDS(ON) = 17 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V RDS(ON) = 30 mΩ @ VGS = 1.8 V • Low gate charge (17 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ±8 (Note 1a) Units V V A W 8 32 2 Power Dissipation for Dual Operation Power Dissipatio... |
| Document |
 FDS6894A Data Sheet
PDF 82.01KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS6894AZ |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
|
| 2 | FDS6890A |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 3 | FDS6890A |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | FDS6892A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
|
| 5 | FDS6892AZ |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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