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FDG6302P |
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| Part Number | FDG6302P |
| Manufacturer | Fairchild Semiconductor |
| Description | These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially ... |
| Features |
-25 V, -0.14 A continuous, -0.4 A peak. RDS(ON) = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package.
SC70-6
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
D1
G2
S2
.02
G1 D2
1 or 4 *
6 or 3
2 or 5
5 or 2
.
SC70-6
S1
3 or 6
4 or 1
*
*The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not a... |
| Document |
 FDG6302P Data Sheet
PDF 302.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG6301N |
Fairchild Semiconductor |
Dual N-Channel/ Digital FET |
|
| 2 | FDG6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 3 | FDG6301N-F085 |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 4 | FDG6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |
|
| 5 | FDG6303N |
ON Semiconductor |
Dual N-Channel Digital FET |
|